Precision, Reliability, and Safety in Power Transistor Testing

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High-power transistor testing shouldn’t be a constant struggle.

To address the challenges of electric mobility, GaN power transistor technologies are evolving rapidly.

However, these transistors present issues related to trapping effects, when electrons are locked, which can reduce their performance.

To improve these technologies, high-power short-pulse pulse IV measurements are necessary.In such situation, too often, engineers have to choose between precision, flexibility, and safety.But shouldn’t it be the other way around? Testing equipment should adapt to your needs—not the other way around.What if you could push the limits without compromising reliability?We’ve been working on a new approach to power transistor characterization.A solution that finally allows you to:

• Get reliable, accurate, and repeatable measurements
• Expand your testing range up to ±150A and 1500V with pulse width down to xxxns
• Protect your components and test setup with smart threshold management
• Seamlessly integrate into your existing workflowStay tuned for the announcement of our next generation of pulsed IV systems !